Deposition Tools

Description

- An ICP Plasma Etch system, with load lock, for etching III-V materials to shallow or standard (<10um) etch depths, and be capable of etching the following materials GaAs, GaN, InP, InSb/GaSb, SixNy, BCB and Polyimide - A High Density Plasma Etch system designed to etch strongly bonded materials, with load lock, capable of etching strongly bonded materials including SiO2 (>100um), Glass, SiNx,, SiC, GaN, PZT and AlN and Al2O3. Must operate with higher plasma density and at lower pressures than conventional ICP systems. Lot 1: The requirement of the Plasma ETCH tools is to etch III-V semiconductor samples, wafers and other substrates, ranging in size from 10 x 10 mm up to 200mm diameter wafers. The requirement of the PECVD tool is to deposit films of dielectric materials onto semiconductor samples, wafers and other substrates, ranging in size from 10 x 10 mm up to 200mm diameter wafers. The supplier must provide all 3 systems, to criteria set out below, for the bid to be successful. Specification of Equipment An ICP Plasma Etch system, with load lock, for etching III-V materials to shallow or standard (<10um) etch depths, and be capable of etching the following materials GaAs, GaN, InP, InSb/GaSb, SixNy, BCB and Polyimide A High Density Plasma Etch system designed to etch strongly bonded materials, with load lock, capable of etching strongly bonded materials including SiO2 (>100um), Glass, SiNx,, SiC, GaN, PZT and AlN and Al2O3. Must operate with higher plasma density and at lower pressures than conventional ICP systems. Lot 1: The requirement of the Plasma ETCH tools is to etch III-V semiconductor samples, wafers and other substrates, ranging in size from 10 x 10 mm up to 200mm diameter wafers. The requirement of the PECVD tool is to deposit films of dielectric materials onto semiconductor samples, wafers and other substrates, ranging in size from 10 x 10 mm up to 200mm diameter wafers. The supplier must provide all 3 systems, to criteria set out below, for the bid to be successful. Specification of Equipment An ICP Plasma Etch system, with load lock, for etching III-V materials to shallow or standard (<10um) etch depths, and be capable of etching the following materials GaAs, GaN, InP, InSb/GaSb, SixNy, BCB and Polyimide A High Density Plasma Etch system designed to etch strongly bonded materials, with load lock, capable of etching strongly bonded materials including SiO2 (>100um), Glass, SiNx,, SiC, GaN, PZT and AlN and Al2O3. Must operate with higher plasma density and at lower pressures than conventional ICP systems.